- 您现在的位置：买卖IC网 > Sheet目录510 > SI4866BDY-T1-E3 (Vishay Siliconix)MOSFET N-CH 12V 21.5A 8-SOIC
Si4866BDY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
12
12
- 3.5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.4
1.0
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = 12 V, V GS = 0 V
V DS = 12 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 4.5 V
V GS = 4.5 V, I D = 12 A
20
0.0042
± 100
1
10
0.0053
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = 2.5 V, I D = 10 A
0.0048
0.0060
Ω
V GS = 1.8 V, I D = 8 A
0.006
0.0074
Forward Transconductance a
g fs
V DS = 15 V, I D = 12 A
80
S
Dynamic b
Input Capacitance
C iss
5020
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 6 V, V GS = 0 V, f = 1 MHz
1305
805
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 6 V, V GS = 4.5 V, I D = 10 A
V DS = 6 V, V GS = 2.5 V, I D = 10 A
52
29.5
6.2
80
45
nC
Gate-Drain Charge
Q gd
8.9
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R g
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 6 V, R L = 1.2 Ω
I D ? 5 A, V GEN = 4.5 V, R g = 1 Ω
V DD = 6 V, R L = 1.2 Ω
I D ? 5 A, V GEN = 10 V, R g = 1 Ω
0.8
26
18
85
32
13
12
57
9
1.3
40
30
130
50
25
24
90
18
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
4
50
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 2.3 A
I F = 9.5 A, dI/dt = 100 A/μs, T J = 25 °C
0.62
50
35
19
31
1.1
80
55
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI4866DY-T1-GE3
MOSFET N-CH 12V 11A 8-SOIC
SI4884BDY-T1-GE3
MOSFET N-CH D-S 30V 8-SOIC
SI4886DY-T1-GE3
MOSFET N-CH 30V 9.5A 8-SOIC
SI4890BDY-T1-E3
MOSFET N-CH 30V 16A 8-SOIC
SI4890DY-T1-GE3
MOSFET N-CH 30V 11A 8-SOIC
SI4894BDY-T1-GE3
MOSFET N-CH 30V 8.9A 8-SOIC
SI4904DY-T1-GE3
MOSFET N-CH 40V 8-SOIC
SI4908DY-T1-GE3
MOSFET N-CH DUAL 40V 5A 8-SOIC
相关代理商/技术参数
SI4866BDY-T1-GE3
功能描述:MOSFET 12V 21.5A 4.45W 5.3mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4866DY
功能描述:MOSFET N-Ch 12 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4866DY-E3
制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 12V 11A 8-Pin SOIC N 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP
SI4866DY-T1
功能描述:MOSFET 12V 17A 1.6W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4866DY-T1-E3
功能描述:MOSFET 12 Volt 11 Amp 3.0W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4866DY-T1-GE3
功能描述:MOSFET 12V 17A 3.0W 5.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4872DY
功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4872DY-E3
功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube